Electrooptical device, substrate for driving electrooptical...

Details Electrooptical device, substrate for driving electrooptical... Electrooptical device, substrate for driving electrooptical...

2006-08-22

2006-08-22

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000, C257S351000

Reexamination Certificate

active

07095082

ABSTRACT:
Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

REFERENCES:
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6246070 (2001-06-01), Yamazaki et al.

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