Multiple oxidation smoothing method for reducing silicon...

Details Multiple oxidation smoothing method for reducing silicon... Multiple oxidation smoothing method for reducing silicon...

2006-10-17

2006-10-17

Healy, Brian (Department: 2883)

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

C385S129000, C385S131000, C385S132000, C438S029000, C438S030000, C438S031000

Reexamination Certificate

active

07123805

ABSTRACT:
The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

REFERENCES:
patent: 6850683 (2005-02-01), Lee et al.
patent: 2002/0104822 (2002-08-01), Naydenkov et al.
patent: 2003/0000919 (2003-01-01), Velebir, Jr.
patent: WO 02/063355 (2002-08-01), None
“Thinning of Si in SOI Wafers by the SCI Standard Clean,” Celler et al.,IEEE International SOI Conferencepp. 114-115 (Oct. 1999).
“Effect of size and roughness light transmission in a Si/SiO2 waveguide: Experiments and model,” Lee et al. Applied Physics Letters. Sep. 2000. vol. 77, No. 11.

Affiliated with

Also associated with

Rating

Multiple oxidation smoothing method for reducing silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple oxidation smoothing method for reducing silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple oxidation smoothing method for reducing silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3675350