Transistor for preventing a thermal runaway caused by temperatur

Details Transistor for preventing a thermal runaway caused by temperatur Transistor for preventing a thermal runaway caused by temperatur

1999-04-05

2000-04-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257338, 257536, H01L 2362

Patent

active

06046481&

ABSTRACT:
A semiconductor device includes a bias circuit for applying a bias to a transistor in which the semiconductor comprises a two-terminal element, connected between an external power source and at least an input of the transistor, having a first conductive contact layer connected to the input of the transistor, a second conductive contact layer connected to the external power source, and a semiconductor layer having a semi-insulation intervened between the first and second conductive contact layers, thereby reducing the thermal runaway caused by temperature rise.

REFERENCES:
patent: 5780900 (1998-07-01), Suzuki et al.
patent: 5932918 (1999-08-01), Krakauer

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