Electronic devices comprising thin-film transistors

Details Electronic devices comprising thin-film transistors Electronic devices comprising thin-film transistors

1999-03-23

2000-04-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257353, 257488, 257489, H01L 2701, H01L 2712, H01L 310392, H01L 2358

Patent

active

060464798

ABSTRACT:
A large-area electronic device, such as an AMLCD, has switching TFTs (T.sub.p) in a matrix and circuit TFTs (T.sub.s) in a peripheral drive circuit. Both the TFTs (T.sub.p, T.sub.s) comprise a field-relief region (130) which has a lower doping concentration (N-) than their drain region (113) and which is present between their channel region (111) and the drain region (113). This field-relief region (130), at least over most of its length, overlaps with the gate (121) in the circuit TFTs (T.sub.s) so as to reduce series resistance in the field-relief region (130) by conductivity modulation with the gate (121). However, the drain region (113) in the switching TFTs (T.sub.p) is offset from overlap with their gate (121) by at least most of the length of their field-relief region (130). This field-relief offset permits the switching TFTs (T.sub.p) to have a lower leakage current than the circuit TFTs (T.sub.s).

REFERENCES:
patent: 5130829 (1992-07-01), Shannon
patent: 5477073 (1995-12-01), Wakai et al.
patent: 5572046 (1996-11-01), Takemura
patent: 5712495 (1998-01-01), Suzawa
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 5977559 (1999-11-01), Zhang et al.
"Characteristics of Offset-Structure Polycrystalline-Silicon Thin-Film Transistors" by Keiji Tanaka et al., in IEEE Electron Devices Letters vol. 9, No. 1, Jan. 1988.
"Influence of Drain Field on Poly-Si TFT Behaviour" by J.R. Ayres et al, In the Proceedings of the Active Matrix Workshop published by SID--The Society for Information Display.
"WS 3/1: Influence of Drain Field on Poly-Si TFT Behaviour" by J.r. Ayres and S.D Brotherton, in Proceedings of the 1996 International Active Matrix Workshop, vol., Sep. 1996, pp. 33-36.

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