Structure and process for reducing the on-resistance of MOS-gate

Details Structure and process for reducing the on-resistance of MOS-gate Structure and process for reducing the on-resistance of MOS-gate

1997-08-04

2000-04-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, H01L 2976

Patent

active

060464739

ABSTRACT:
A VDMOS structure with an added n- doping component, and a LOCOS oxide self-aligned to it, at tie surface extension of the drain. The additional shallow n- component permits the body diffusion to be heavier, and hence reduces the risk of latchup.

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