Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257S340000, C257S343000
Reexamination Certificate
active
07005703
ABSTRACT:
An MOS device includes a semiconductor layer comprising a substrate of a first conductivity type and a second layer of a second conductivity type formed on at least a portion of the substrate. First and second source/drain regions of the second conductivity type are formed in the second layer proximate an upper surface of the second layer, the second layer being spaced laterally from the first source/drain region. A gate is formed above the second layer proximate the upper surface of the second layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one electrically conductive trench formed in the second layer between the gate and the second source/drain region, the trench being formed proximate the upper surface of the semiconductor layer and extending substantially vertically through the second layer to the substrate. The MOS device exhibits reduced HCI effects and/or improved high-frequency performance.
REFERENCES:
patent: 5569949 (1996-10-01), Malhi
patent: 5918137 (1999-06-01), Ng et al.
patent: 6548863 (2003-04-01), Patti
patent: 6787872 (2004-09-01), Kinzer et al.
patent: 2003/0025154 (2003-02-01), Haynie
patent: 2004/0222461 (2004-11-01), Peyre-Lavigner et al.
C.S. Kim et al., “Trenched Sinker LDMOSFET (TS-LDMOS) Structure for High Power Amplifier Application above 2 GHz,” IEEE, IEDM, pp. 40.2.1-10.2.4, 2001.
Shibib Muhammed Ayman
Xu Shuming
Agere Systems Inc.
Wilson Allan R.
LandOfFree
Metal-oxide-semiconductor device having improved performance... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-oxide-semiconductor device having improved performance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-oxide-semiconductor device having improved performance... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3674819