Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2006-12-12
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S492000, C257S493000
Reexamination Certificate
active
07148539
ABSTRACT:
A semiconductor structure includes a substrate, a source area formed in the substrate and a drain area formed in the substrate and comprising a doping of a first conductivity type. The drain area includes a first drain portion with a first doping concentration and a second drain portion with a second doping concentration, wherein the first doping concentration is higher than the second doping concentration. In the second drain portion a first region is formed comprising a doping of a second conductivity type which is different to the first conductivity type. Further, a second region is formed in the substrate below the second drain portion comprising a doping of the first conductivity type. A channel area is provided in the substrate between the source area and the second drain portion.
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patent: 6756636 (2004-06-01), Onishi et al.
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Disney, D. R., A. K. Paul, M. Darwish, R. Basecki, V. Rumennik, “A New 800V Lateral MOSFET With Dual Conduction Paths,” Proceedings of the 13thInternational Symposium on Power Semiconductor Devices & ICs, Osaka, Japan, Jun. 2001, pp. 399-402, (4 pages).
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Díaz José R.
Infineon - Technologies AG
Jackson Jerome
Maginot Moore & Beck
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