Non-volatile semiconductor memory device and electric device...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185330, C365S189050

Reexamination Certificate

active

06999344

ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array in which electrically rewritable floating gate type memory cells are arranged; and a plurality of sense amplifier circuits configured to read data from the memory cell array, wherein each the sense amplifier circuit is configured to sense cell data of a first memory cell selected from the memory cell array under a read condition determined in correspondence with cell data of a second memory cell adjacent to the first memory cell and written after the first memory cell.

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patent: 6879520 (2005-04-01), Hosono et al.
patent: 6937510 (2005-08-01), Hosono et al.
patent: 2003/0142568 (2003-07-01), Giove et al.
patent: 2001-267537 (2001-09-01), None
patent: 2001-274364 (2001-10-01), None
U.S. Appl. No. 09/800,913, Hosono et al.

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