Semiconductor memory device having full depletive type logic...

Details Semiconductor memory device having full depletive type logic... Semiconductor memory device having full depletive type logic...

2006-06-20

2006-06-20

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S392000

Reexamination Certificate

active

07064389

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an insulating layer, a silicon layer, full depletion type transistors, and partial depletion type transistors. The insulating layer is formed on the semiconductor substrate. The silicon layer has a first region and a second region. The silicon layer is formed on the insulating layer. The full depletion type transistors are used for a logical circuit, and are formed on the silicon layer at the first region. The partial depletion type transistors are used for a memory cell circuit and are formed on the silicon layer at the second region. The second region of the silicon layer is maintained at a fixed potential.

REFERENCES:
patent: 5674760 (1997-10-01), Hong
patent: 6208010 (2001-03-01), Nakazato et al.
patent: 6215155 (2001-04-01), Wollesen
patent: 6407427 (2002-06-01), Oh
patent: 6632710 (2003-10-01), Takahashi
patent: 6809381 (2004-10-01), Yoshida
patent: 2002/0109187 (2002-08-01), Matsumoto et al.
patent: 05-291574 (1993-11-01), None
patent: 06/291265 (1994-10-01), None
patent: 09-260679 (1997-10-01), None
patent: 09260679 (1997-10-01), None
patent: 10-012717 (1998-01-01), None
patent: 11-298001 (1999-10-01), None
patent: 11298001 (1999-10-01), None
patent: 2001-44441 (2001-02-01), None
Yo-Hwan Koh et al, Body-contacted SOI MOSFET Structure with Fully Bulk CMOS Compatible Layout and Process (3 pp.); IEEE Election Device Letters, vol. 18, No. 3, Mar. 1997.
Yo-Hwan Koh et al, 1Giga Bit SOI DRAM With Fully Bulk Compatible Process and Body-Contacted SOI MOSFET Structure (4 pp.); IEDM Tech. Fig., 1997, pp. 24.1.1-24.1.4.

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