Method of refreshing a memory device utilizing PASR and...

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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Details

C365S201000

Reexamination Certificate

active

07149140

ABSTRACT:
In a memory device having an N number of banks, a refresh operation according to a piled refresh scheme is performed during a self-refresh mode to refresh the N number of banks in regular sequence when it is necessary to refresh all of the N number of banks. A refresh operation according to a Partial Array Self Refresh (PASR) scheme is performed during a self-refresh mode when it is necessary to refresh only an i number of banks (where 1<i≦N−1) from among the N number of banks. During an auto-refresh mode, a refresh operation according to the piled refresh scheme is performed.

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patent: 6590822 (2003-07-01), Hwang et al.
patent: 6650587 (2003-11-01), Derner et al.
patent: 6950364 (2005-09-01), Kim
patent: 2005/0270874 (2005-12-01), Hur et al.
patent: 1999 0042331 (1999-06-01), None
patent: 10-2004 0040579 (2004-05-01), None

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