Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-12-12
2006-12-12
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S201000
Reexamination Certificate
active
07149140
ABSTRACT:
In a memory device having an N number of banks, a refresh operation according to a piled refresh scheme is performed during a self-refresh mode to refresh the N number of banks in regular sequence when it is necessary to refresh all of the N number of banks. A refresh operation according to a Partial Array Self Refresh (PASR) scheme is performed during a self-refresh mode when it is necessary to refresh only an i number of banks (where 1<i≦N−1) from among the N number of banks. During an auto-refresh mode, a refresh operation according to the piled refresh scheme is performed.
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Hur Hwang
Kim Tae Yun
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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