Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-11-21

2006-11-21

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE27104

Reexamination Certificate

active

07138674

ABSTRACT:
A semiconductor memory device includes a cell block composed of several series-connected units having a ferroelectric capacitor and a cell transistor parallel-connected to the ferroelectric capacitor and a select transistor connected to an end of the cell block. Mutually separated first impurity diffusion layers are formed on the surface of the semiconductor substrate along a first direction, and have a first area. A second impurity diffusion layer is formed on the surface of the semiconductor substrate separated from the end first impurity diffusion layer, and has a second area. A first gate electrode is provided on the semiconductor substrate between the first impurity diffusion layers along a second direction. A second gate electrode is provided on the semiconductor substrate between the end first impurity diffusion layer and the second impurity diffusion layer along a second direction. A contact electrically connects a bit line and the second impurity diffusion layer.

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