Method and apparatus for determining characteristics of MOS...

Details Method and apparatus for determining characteristics of MOS... Method and apparatus for determining characteristics of MOS...

2006-06-27

2006-06-27

Whitmore, Stacy A. (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

07069525

ABSTRACT:
A set of ring oscillators is formed within a predetermined distance of each other. Each ring oscillator includes a number of coupled stages. The stages for a first given ring oscillator include an inverter having one or more first MOS devices having a first gate length. The stages for a second given ring oscillator include one or more second MOS devices having a second designed gate length. The stages for a third given ring oscillator comprise one or more third MOS devices having a third designed gate length. The second and third designed gate lengths are different and one of the second and third designed gate lengths is approximately equal to the first designed gate length. Performance is measured by using one of more of the given ring oscillators. The set of ring oscillators is used to determine one or more additional characteristics of MOS devices in the ring oscillators.

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Taur et al., “Fundamentals of Modern VLSI Devices,” 5.3 Sensitivity of CMOS Delay to Device Parameters, 5.3:1-4.3, pp. 257-273 (1998).

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