Structure and method to fabricate self-aligned transistors...

Details Structure and method to fabricate self-aligned transistors... Structure and method to fabricate self-aligned transistors...

2006-02-28

2006-02-28

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S587000

Reexamination Certificate

active

07005365

ABSTRACT:
The present invention provides, in one embodiment, a method (100) of forming dual work function metal gate electrodes in a semiconductor device. The method includes forming a gate dielectric (105) over a substrate (110) and depositing a mold layer (115) having a first opening (120) therein over the gate dielectric (105). The method further includes creating a first metal gate electrode (125) by depositing a first metal in the first opening (120). Other embodiments include an active device (200) produced by the above-described method and method of manufacturing an integrated circuit (300) using the above-described method.

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“Pursuing the Perfect Low-K Dielectric”; www.e-insite.net/semiconductor/index.asp?layout=articlePrint&article ID=CA164243.
B. Maiti and P.J. Tobin; “Metal Gates for Advanced CMOS Technology”; SPIE vol. 3881; Sep. 1999; pp. 46-57.

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