Semiconductor storage location

Details Semiconductor storage location Semiconductor storage location

2006-08-15

2006-08-15

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S296000, C257S301000, C257SE27084

Reexamination Certificate

active

07091547

ABSTRACT:
A semiconductor memory cell, in particular, in a DRAM memory cell array, includes a selection transistor and a storage capacitor. The storage capacitor has a first and a second capacitor electrodes. The first capacitor electrode is connected to a read-out line via the selection transistor. A control terminal of the selection transistor is connected to a control line. A layer of a superionic conductor is arranged between the first and second capacitor electrodes of the storage capacitor. The high conductivity of the superionic conductor for ions in association with a negligible electron conductivity allows extremely high capacitances to be produced in a small space.

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George Thieme Verlag, Lonenleiter, 1995, 2 pages.

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