Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-06-20
2006-06-20
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189110
Reexamination Certificate
active
07064972
ABSTRACT:
A ferroelectric memory device is disclosed, which includes a memory cell array which is formed of a matrix layout of memory cells each having a transistor with its gate connected to a word line and a ferroelectric capacitor having one end connected to a bit line and the other end connected to a plate line, a plate-line drive circuit for driving the plate line, a word-line drive circuit for driving the word line, and a sense amplifier connected to the bitline for detecting and amplifying memory cell data. At least one of the plateline drive circuit and said wordline drive circuit has a pullup circuit operable to potentially raise or boost an output terminal of this at least one circuit from a low level up to a high level and a pulldown circuit for letting the output terminal potentially drop from the high level down to the low level. At least one of the pullup and pulldown circuits is arranged to be variable in driving ability or “drivability” during its driving operation.
REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 6977835 (2005-12-01), Kang
D. Takashima, et al., ISSCC, IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 40-41, “A 76mm28Mb Chain Ferroelectric Memory”, Feb. 5, 2001.
U.S. Appl. No. 10/934,358, filed Sep. 7, 2004, Oikawa et al.
Kabushiki Kaisha Toshiba
Nguyen Tan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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