Semiconductor memory cell and semiconductor memory device

Details Semiconductor memory cell and semiconductor memory device Semiconductor memory cell and semiconductor memory device

2006-10-31

2006-10-31

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S166000, C438S257000, C438S487000

Reexamination Certificate

active

07129122

ABSTRACT:
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

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