Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-14
2006-11-14
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21400
Reexamination Certificate
active
07135401
ABSTRACT:
The invention includes methods for forming electrical connections associated with semiconductor constructions. A semiconductor substrate is provided which has a conductive line thereover, and which has at least two diffusion regions adjacent the conductive line. A patterned etch stop is formed over the diffusion regions. The patterned etch stop has a pair of openings extending through it, with the openings being along a row substantially parallel to an axis of the line. An insulative material is formed over the etch stop. The insulative material is exposed to an etch to form a trench within the insulative material, and to extend the openings from the etch stop to the diffusion regions. At least a portion of the trench is directly over the openings and extends along the axis of the line. An electrically conductive material is formed within the openings and within the trench.
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patent: 6163067 (2000-12-01), Inohara et al.
patent: 6337267 (2002-01-01), Yang
patent: 2003/0000644 (2003-01-01), Subramanian et al.
patent: 102 00 428 (2003-04-01), None
patent: 2005/014951 (2005-04-01), None
Fishburn Fred D.
Tran Luan C.
Geyer Scott B.
Micro)n Technology, Inc.
Wells St. John P.S.
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