Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2006-11-14

2006-11-14

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S642000, C257S774000, C257S741000, C257S635000, C257S750000, C438S597000, C438S689000, C438S710000

Reexamination Certificate

active

07135776

ABSTRACT:
A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film102formed on the semiconductor substrate and a multiple-layered insulating film140provided on the interlayer insulating film102. The semiconductor device also includes an electric conductor that extends through the multiplelayered insulating film140and includes a Cu film120and a barrier metal film118. The barrier metal film118is covers side surfaces and a bottom surface of the Cu film120. An insulating film116is disposed between the multiple-layered insulating film140and the electric conductor (i.e., Cu film120and barrier metal film118).

REFERENCES:
patent: 6051508 (2000-04-01), Takase et al.
patent: 2001/0017422 (2001-08-01), Oda
patent: 2004/0183164 (2004-09-01), Usami
patent: 2001-102449 (2001-04-01), None

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