Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-13
2006-06-13
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C029S837000
Reexamination Certificate
active
07060608
ABSTRACT:
Explosive forces are used to fill interconnect material into trenches, via holes and other openings in semiconductor products. The interconnect material may be formed of metal. The metal may be heated prior to the force filling step. The explosive forces may be generated, for example, by igniting mixtures of gases such as hydrogen and oxygen, or liquids such as alcohol and hydrogen peroxide. To control or buffer the explosive force, a baffle may be interposed between the explosions and the products being processed. The baffle may be formed of a porous material to transmit waves to the semiconductor products while protecting the products from contaminants. Various operating parameters, including the flow rate of the fuel and the oxidizing materials, may be positively controlled. In another embodiment of the invention, a piston is used to transmit the explosive force. If desired, an annular space at the periphery of the piston may be maintained at atmospheric pressure to protect against wafer contamination. A compact apparatus for filling holes in semiconductor wafers is also disclosed.
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Dang Phuc T.
Dickstein , Shapiro, Morin & Oshinsky, LLP
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