Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

2006-02-14

2006-02-14

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S155000, C438S157000, C438S164000

Reexamination Certificate

active

06998299

ABSTRACT:
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

REFERENCES:
patent: 5650636 (1997-07-01), Takemura et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5856689 (1999-01-01), Suzawa
patent: 5998841 (1999-12-01), Suzawa
patent: 6323515 (2001-11-01), Yamazaki et al.
patent: 6624012 (2003-09-01), Shibata et al.
U.S. Appl. No. 09/653,535, filed Aug. 31, 2000, is related to the present invention.

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