Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2006-08-22

2006-08-22

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S625000, C438S637000, C438S687000

Reexamination Certificate

active

07094681

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.

REFERENCES:
patent: 6420441 (2002-07-01), Allen et al.
patent: 6558747 (2003-05-01), Nakata et al.
patent: 6737365 (2004-05-01), Kloster et al.
patent: 2003/0232495 (2003-12-01), Moghadam et al.
patent: 2004/0175957 (2004-09-01), Lukas et al.
patent: 2004/0175958 (2004-09-01), Lin et al.
patent: 2001-351916 (2001-12-01), None
patent: 2002-9078 (2002-01-01), None
Japanese Patent Office Notification for Reasons of Rejection and English translation thereof.

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