Semiconductor device having a gate oxide film with some...

Details Semiconductor device having a gate oxide film with some... Semiconductor device having a gate oxide film with some...

2006-02-07

2006-02-07

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S069000, C257S072000, C257S088000, C257S204000, C257S205000, C257S206000, C257S274000, C257S338000, C257S350000, C257S351000, C257S357000, C257S358000, C257S359000, C257S369000, C257S370000, C257S371000, C257S372000, C257S373000, C257S374000, C257S375000, C257S376000, C257S377000, C257SE51005, C257SE51006, C257SE51007

Reexamination Certificate

active

06995432

ABSTRACT:
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.

REFERENCES:
patent: 3806778 (1974-04-01), Shimakura et al.
patent: 3935083 (1976-01-01), Tomozawa et al.
patent: 3988214 (1976-10-01), Tsunemitsu
patent: 3997367 (1976-12-01), Yau
patent: 4335161 (1982-06-01), Luo
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4468855 (1984-09-01), Sasaki
patent: 4502204 (1985-03-01), Togashi et al.
patent: 4503601 (1985-03-01), Chiao
patent: 4616399 (1986-10-01), Ooka
patent: 4701423 (1987-10-01), Szluk
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4772927 (1988-09-01), Saito et al.
patent: 4885259 (1989-12-01), Osinski et al.
patent: 4942441 (1990-07-01), Konishi et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 5097301 (1992-03-01), Sanchez
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5151374 (1992-09-01), Wu
patent: 5153702 (1992-10-01), Aoyama et al.
patent: 5165075 (1992-11-01), Hiroki et al.
patent: 5227321 (1993-07-01), Lee et al.
patent: 5238859 (1993-08-01), Kamijo et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5250835 (1993-10-01), Izawa
patent: 5264383 (1993-11-01), Young
patent: 5287205 (1994-02-01), Yamazaki et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5320973 (1994-06-01), Kobayashi
patent: 5323042 (1994-06-01), Matsumoto
patent: 5403762 (1995-04-01), Takemura
patent: 5410172 (1995-04-01), Koizumi et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5422293 (1995-06-01), Konya
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5472889 (1995-12-01), Kim et al.
patent: 5474945 (1995-12-01), Yamazaki et al.
patent: 5475244 (1995-12-01), Koizumi et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5495121 (1996-02-01), Yamazaki et al.
patent: 5503731 (1996-04-01), Konuma et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5521107 (1996-05-01), Yamazaki et al.
patent: 5534884 (1996-07-01), Mase et al.
patent: 5539550 (1996-07-01), Spitzer et al.
patent: 5545571 (1996-08-01), Yamazaki et al.
patent: 5576556 (1996-11-01), Takemura et al.
patent: 5583347 (1996-12-01), Misawa et al.
patent: 5591990 (1997-01-01), Misawa et al.
patent: 5608251 (1997-03-01), Konuma et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5620905 (1997-04-01), Konuma et al.
patent: 5859445 (1999-01-01), Yamazaki
patent: 5939731 (1999-08-01), Yamazaki et al.
patent: 5962872 (1999-10-01), Zhang et al.
patent: 5981973 (1999-11-01), Matsuzaki et al.
patent: 6011277 (2000-01-01), Yamazaki
patent: 6049092 (2000-04-01), Konuma et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6121652 (2000-09-01), Suzawa
patent: 6259138 (2001-07-01), Ohtani et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6388291 (2002-05-01), Zhang et al.
patent: 6414345 (2002-07-01), Suzawa
patent: 6433361 (2002-08-01), Zhang et al.
patent: 6489632 (2002-12-01), Yamazaki et al.
patent: 6509212 (2003-01-01), Zhang et al.
patent: 2003/0201437 (2003-10-01), Zhang
patent: 0 197 738 (1986-03-01), None
patent: 0 456 199 (1991-05-01), None
patent: 0 502 749 (1992-09-01), None
patent: 0 072 216 (1983-02-01), None
patent: 58-023479 (1983-02-01), None
patent: 58-105574 (1983-06-01), None
patent: 58-118154 (1983-07-01), None
patent: 58-186979 (1983-11-01), None
patent: 59-220971 (1984-12-01), None
patent: 62-024460 (1987-02-01), None
patent: 63-056916 (1988-03-01), None
patent: 63-066969 (1988-03-01), None
patent: 63-261880 (1988-10-01), None
patent: 64-007567 (1989-01-01), None
patent: 64-024460 (1989-01-01), None
patent: 01-200637 (1989-08-01), None
patent: 02-073627 (1990-03-01), None
patent: 02-159730 (1990-06-01), None
patent: 02-162738 (1990-06-01), None
patent: 02-181963 (1990-07-01), None
patent: 02-206162 (1990-08-01), None
patent: 02-246277 (1990-10-01), None
patent: 03-016140 (1991-01-01), None
patent: 03-227068 (1991-10-01), None
patent: 03-244134 (1991-10-01), None
patent: 04-075387 (1992-03-01), None
patent: 04-196171 (1992-07-01), None
patent: 04-226039 (1992-08-01), None
patent: 04-254335 (1992-09-01), None
patent: 04-287930 (1992-10-01), None
patent: 05-021801 (1993-01-01), None
patent: 05-160153 (1993-06-01), None
patent: 05-226364 (1993-09-01), None
patent: 05-315329 (1993-11-01), None
Takabatake et al., “CMOS Circuits for Peripheral Circuit Integrated Poly-Si TFT LCD Fabricated at Low Temperature Below 600 degrees C,” Jun. 1991, pp. 1303-1309, IEEE Transactions on Electron Devices, vol. 38, No. 6.
Partial European Search Report EP 94 30 6862.
Electrochemical Society Spring Meeting, (Extended Abstracts), Toronto, Ontario, Canada, May 11-16, 1975, Princeton, NJ USA, Electrochemical Soc., USA, pp. 179-181, XP002020881, Tsunemitsu M: Selective Anode-Oxidation of Bi-Metallic Layer.
Specification, drawings, abstract and pending claims of U.S. Appl. No. 90/005,686 filed Mar. 28, 2000 entitled Active Matrix Circuit.
Specification, drawings, abstract and pending claims of U.S. Appl. No. 09/532,096 filed Mar. 21, 2000 entitled Semiconductor Device Including Active Matrix Circuit.
Specification, drawings, abstract of U.S. Appl. No. 08/491,255 filed Jun. 16, 1995 entitled Method for Forming an Insulated Gate Field Effect Transistor.
Specification, drawings, abstract and pending claims of U.S. Appl. No. 90/005,692 filed Apr. 3, 2000.
Wolf,Silicon Process For The VLSI ERA, vol. 3, The Submicron MOSFET, p. 137.

Affiliated with

Also associated with

Rating

Semiconductor device having a gate oxide film with some... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a gate oxide film with some..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a gate oxide film with some... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3668128