Method for forming a hard mask in a layer on a planar device

Details Method for forming a hard mask in a layer on a planar device Method for forming a hard mask in a layer on a planar device

2006-02-28

2006-02-28

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000, C430S314000, C430S316000, C430S318000, C216S041000

Reexamination Certificate

active

07005240

ABSTRACT:
A hard mask is produced from spacer structures. The spacer structures are formed from a conformal deposition on elevated structures produced lithographically in a projection process. The conformal deposition is etched back laterally on the elevated structures resulting in the spacer structures. The elevated structures between the spacer structures are subsequently etched away, so that the spacer structures remain in an isolated fashion as sublithographic structures of a hard mask with a doubled structure density compared with that originally produced in lithographic projection. In a regularly disposed two-dimensional array of structures in the hard mask for forming trenches—for instance for trench capacitors—the method achieves a doubling of the structure density in the array. A further iteration step is formed by forming further spacer structures on the first and second spacer structures, thereby achieving an even higher increase in structure density in the hard mask.

REFERENCES:
patent: 6071653 (2000-06-01), Lin
patent: 2003/0027059 (2003-02-01), Schweeger

Affiliated with

Also associated with

Rating

Method for forming a hard mask in a layer on a planar device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a hard mask in a layer on a planar device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a hard mask in a layer on a planar device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3668093