Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-06-20

2006-06-20

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S380000, C257S381000, C257S903000, C257S904000

Reexamination Certificate

active

07064398

ABSTRACT:
In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the bit line direction) including first and second driver MOS transistors, first and second load MOS transistors and first and second access MOS transistors, two capacitors are arranged spaced apart from each other on embedded interconnections to be storage nodes, with lower and upper cell plates cross-coupled to each other.

REFERENCES:
patent: 5145799 (1992-09-01), Rodder
patent: 6479860 (2002-11-01), Ohbayashi
patent: 6-151771 (1994-05-01), None
patent: 2002-76143 (2002-03-01), None
patent: 2002-83882 (2002-03-01), None

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