Semiconductor memory device having a gate electrode and a...

Details Semiconductor memory device having a gate electrode and a... Semiconductor memory device having a gate electrode and a...

2006-06-20

2006-06-20

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S298000

Reexamination Certificate

active

07064375

ABSTRACT:
A semiconductor memory device, including a first memory cell having a first gate electrode, a first diffusion layer, and a second diffusion layer; a first contact layer connected to the first diffusion layer of the first memory cell; a second contact layer connected to the first contact layer; a second memory cell having a second gate electrode, a third diffusion layer and a fourth diffusion layer, the second gate electrode of the second memory cell electrically connected to the first gate electrode of the first memory cell, the first and second memory cells arranged in a direction perpendicular to the first bit line; and a conductive layer commonly connected to the second diffusion layer of the first memory cell and the fourth diffusion layer of the second memory cell, a height of the conductive layer substantially being coplanar with a height of the first contact layer.

REFERENCES:
patent: 5659500 (1997-08-01), Mehrad
patent: 6451642 (2002-09-01), Mehrad et al.
patent: 6703676 (2004-03-01), Hirai et al.
patent: 6731538 (2004-05-01), Noda et al.
patent: 2001/0008311 (2001-07-01), Harada et al.
patent: 6-334156 (1994-12-01), None
patent: 7-74326 (1995-03-01), None
patent: 9-129854 (1997-05-01), None
patent: 10-326896 (1998-12-01), None
patent: 11-265947 (1999-09-01), None
patent: 2001-68571 (2001-03-01), None
patent: 2002-76147 (2002-03-01), None
H. Watanabe, et al. “Novel 0.44 μm2Ti-Salicide STI Cell Technology for High-Density NOR Flash Memories and High Performance Embedded Application,” IEDM 98-975.
U.S. Appl. No. 10/602,595, filed Jun. 25, 2003, Yonehama et al.
U.S. Appl. No. 10/927,324, filed Aug. 27, 2004, Sakagami.

Affiliated with

Also associated with

Rating

Semiconductor memory device having a gate electrode and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having a gate electrode and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a gate electrode and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3666844