Semiconductor device, method of manufacturing...

Details Semiconductor device, method of manufacturing... Semiconductor device, method of manufacturing...

2006-11-28

2006-11-28

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21388

Reexamination Certificate

active

07141493

ABSTRACT:
A semiconductor device has a substrate and an electrode layer formed on the substrate, and the electrode layer includes a plurality of conductive layers and an insulating layer which are stacked, the insulating layer being interposed between two of the conductive layers adjacent each other, a through-hole being formed in each of the conductive layers lower than an uppermost conductive layer among the conductive layers, and the through-hole being filled with an insulating material.

REFERENCES:
patent: 6608371 (2003-08-01), Kurashima et al.
patent: 6943056 (2005-09-01), Nemoto
patent: 6962865 (2005-11-01), Hanaoka et al.
patent: 6964887 (2005-11-01), Akagawa
patent: 6995455 (2006-02-01), Nemoto et al.
patent: 2002/0025587 (2002-02-01), Wada
patent: 2002/0046880 (2002-04-01), Takubo et al.
patent: 2004/0251554 (2004-12-01), Masuda
patent: 2005/0042786 (2005-02-01), Bieck et al.
patent: A 2002-50738 (2002-02-01), None
I. Miyazawa et al., “Development of Die Level Stacked Packaging”,2003 ICEP Official Program,Apr. 16-18, 2003.

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