Method for fabricating metal wiring

Details Method for fabricating metal wiring Method for fabricating metal wiring

2006-08-08

2006-08-08

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C438S687000, C438S688000, C257SE23134, C257SE21295

Reexamination Certificate

active

07087520

ABSTRACT:
A semiconductor device includes a semiconductor substrate and metal wiring formed by alternately depositing aluminum layers and copper layers on the semiconductor substrate so that a top layer of the metal wiring is an aluminum layer. The metal wiring is fabricated by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times to form a metal wiring layer having an aluminum top layer. A photoresist film pattern is formed on the metal wiring layer and metal wiring is formed by performing an etching process on the metal wiring layer using the photoresist film pattern as a mask.

REFERENCES:
patent: 4855016 (1989-08-01), Jucha et al.
patent: 5795829 (1998-08-01), Shen
patent: 6291336 (2001-09-01), Teng
patent: 6635548 (2003-10-01), Bernstein et al.
patent: 6841877 (2005-01-01), Saijo et al.
patent: 2003/0080393 (2003-05-01), Dalton et al.

Affiliated with

Also associated with

Rating

Method for fabricating metal wiring does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating metal wiring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating metal wiring will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3664740