Semiconductor device and it's manufacturing method

Details Semiconductor device and it's manufacturing method Semiconductor device and it's manufacturing method

2006-08-08

2006-08-08

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

07087956

ABSTRACT:
In a semiconductor device having a memory element and a logic element formed on the same semiconductor substrate, a transistor of the memory element comprises a gate electrode (16) embedded within a trench (13) formed in a semiconductor substrate (11) through a gate insulating film (15) and a diffusion layer (17) formed on the side of the semiconductor substrate (11) at a sidewall of the trench (13), and a take-out electrode (20) connected to the diffusion layer (17) is provided so that the take-out electrode overlaps the gate electrode (16) through a first interlayer insulating film (insulating film) (18) on the gate electrode (16). A word line (16) is provided in the trench (13) and an impurity concentration of the diffusion layer (17) is decreased as a depth thereof is increased.

REFERENCES:
patent: 5460989 (1995-10-01), Wake
patent: 5488244 (1996-01-01), Quek et al.
patent: 5552620 (1996-09-01), Lu et al.
patent: 5578851 (1996-11-01), Hshieh et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6063669 (2000-05-01), Takaishi
patent: 6313493 (2001-11-01), Mori et al.
patent: 6323518 (2001-11-01), Sakamoto et al.
patent: 4-212466 (1992-08-01), None
patent: 7-66297 (1995-03-01), None
patent: 9-232535 (1997-09-01), None
patent: 2001-210801 (2001-08-01), None
Stephen A. Campbell. The Science and Engineering of Microelectronic Fabrication. 1996, Oxford University Press. pp. 136 an 137.

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