Nonvolatile semiconductor storage device and production...

Details Nonvolatile semiconductor storage device and production... Nonvolatile semiconductor storage device and production...

2006-08-29

2006-08-29

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257S314000, C257S617000, C257S368000

Reexamination Certificate

active

07098504

ABSTRACT:
There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

REFERENCES:
patent: 6269023 (2001-07-01), Derhacobian et al.
patent: 6418062 (2002-07-01), Hayashi et al.
patent: 6462374 (2002-10-01), Usuki et al.
patent: 6717860 (2004-04-01), Fujiwara
patent: 6723606 (2004-04-01), Flagan et al.
patent: 5118782 (1976-06-01), None
patent: 5532235 (1980-08-01), None
patent: 10135357 (1998-05-01), None
patent: 11-289021 (1999-10-01), None
patent: 11289021 (1999-10-01), None
Jacob Killens, Utilizing Standard CMOS Process Floating Gate Devices for Analog Design, Mississipi State University, Aug. 2001, 1-38.
“Si dot TFT Memory” Kenichi Taira, et al ,IEICE Technical Report, vol. 100, No. 3, pp. 51-56, Apr. 13, 2000, (English abstract only).
“MOS Memory Using Germanium Nanocrystals Formed by Thermal Oxidation of Si1−xGex”, Ya-Chin King et al, IEDM Technical Digest, pp. 115-118.

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