Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S306000, C257S758000, C438S238000, C438S244000, C438S003000
Reexamination Certificate
active
07151288
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal compound film provided on the silicon carbide film and containing a metal carbide, and an electrode provided on the metal compound film.
REFERENCES:
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 6346741 (2002-02-01), Van Buskirk et al.
patent: 6656830 (2003-12-01), Subramanian et al.
patent: 6680514 (2004-01-01), Geffken et al.
patent: 6693356 (2004-02-01), Jiang et al.
patent: 6744090 (2004-06-01), Kim
patent: 6767769 (2004-07-01), Hawley et al.
patent: 07030111 (1995-01-01), None
patent: 9-252095 (1997-09-01), None
patent: 2001-267516 (2001-09-01), None
patent: 2002-289810 (2002-10-01), None
patent: 2002289810 (2002-10-01), None
Periodic Table of the Elements—, date unknown.
Imai Keitaro
Yamakawa Koji
Chu Chris C.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Parker Kenneth
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