Creation of high mobility channels in thin-body SOI devices

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

19

Reexamination Certificate

active

07067386

ABSTRACT:
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film-and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6323108 (2001-11-01), Kub et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 6717213 (2004-04-01), Doyle et al.
patent: 6750130 (2004-06-01), Fitzgerald
patent: 6852652 (2005-02-01), Maa et al.
patent: 6890835 (2005-05-01), Chu et al.
patent: 6893936 (2005-05-01), Chen et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Creation of high mobility channels in thin-body SOI devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Creation of high mobility channels in thin-body SOI devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Creation of high mobility channels in thin-body SOI devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3659609

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.