Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-26

2006-12-26

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S758000, C257S781000

Reexamination Certificate

active

07154181

ABSTRACT:
A semiconductor device and a method of manufacturing the device includes a first buried wiring, a second buried wiring formed as a layer different from the first buried wiring, a contact hole, which is formed between the first buried wiring and the second buried wiring and is filled with a wiring material for electrically connecting the first buried wiring and the second buried wiring therethrough, and a dummy hole, which has a hole diameter different from the contact hole, is so formed in vicinity of the contact hole as to connect the first buried wiring, and is filled with a wiring material therein.

REFERENCES:
patent: 5885857 (1999-03-01), Yamaha et al.
patent: 6468894 (2002-10-01), Yang et al.

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