Semiconductor device having capacitor and method of...

Details Semiconductor device having capacitor and method of... Semiconductor device having capacitor and method of...

2006-02-14

2006-02-14

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000

Reexamination Certificate

active

06998663

ABSTRACT:
A semiconductor device, comprising a first wiring formed in a first insulating film, a second insulating film formed on the first insulating film, a first electrode film selectively formed on the second insulating film, a third insulating film formed on the first electrode film, and having an end portion and a central portion, wherein the end portion has a thickness thinner than the central portion, a second electrode film formed on the central portion of the third insulating film such that the second electrode film faces the first electrode film.

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patent: 2-162731 (1990-06-01), None
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R. Mahnkopr, et al., “System on a Chip” Technology Platform for 0.18 μm Digital, Mixed Signal & eDRAM Applications, Proceeding of IEDM Technology Digest 849, 1999, pp. 1-4.

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