Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-12-12

2006-12-12

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000

Reexamination Certificate

active

07148537

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, a gate insulating film on the semiconductor substrate, a gate electrode on the gate insulating film, control insulating films formed on both side faces in a gate length direction of the gate electrode, charge storage layers formed on both the side faces via the control insulating films, a tunnel insulating film formed between the charge storage layers and the semiconductor substrate, and source/drain regions between which the gate electrode and the charge storage layers are interposed, and which are formed in a surface of the semiconductor substrate. Preferably, fixed information is stored depending on presence/absence of an impurity diffusion layer formed in a surface portion of the semiconductor substrate directly under the tunnel insulating film, semi-fixed information is stored depending on an amount of charges in the charge storage layers, and charges opposite to the charges are induced in the surface portion.

REFERENCES:
patent: 3420165 (2003-04-01), None
patent: 2003-203998 (2003-07-01), None
Sandip Tiwari, et al., “Straddle-Gate Transistor: Changing MOSFET Channel Length Between Off-and On-State Towards Achieving Tunneling-Defined Limit of Field-Effect”, IEEE, 1998, 4 Pages.

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