Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-07-22
2000-03-07
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257466, 385 35, H01L 310232, H01L 3100, G02B 632
Patent
active
060344059
ABSTRACT:
The invention is a method and resulting device which provides a strong bond between a silicon substrate and an oxide component mounted within a cavity in the substrate. A layer of titanium, for example, is deposited on the walls of the cavity, followed by deposition of a layer of aluminum. The structure is preferably annealed to form titanium silicide and titanium-aluminum interface layers. The component is then bonded to the aluminum layer.
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patent: 5178319 (1993-01-01), Coucoulas
patent: 5194105 (1993-03-01), Nguyen
patent: 5559918 (1996-09-01), Furuyama et al.
patent: 5567981 (1996-10-01), Bhansali et al.
patent: 5784509 (1998-07-01), Yamane et al.
U.S. Patent Application Serial Number 60/009116 filed on Dec. 22, 1995 (Anigbo).
Brady Michael Francis
Dautartas Mindaugas Fernand
Dormer James F.
Merchant Sailesh Mansinh
Nijander Casimir Roman
Birnbaum L. H.
Dutton Brian
Lucent Technologies - Inc.
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