Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-25
2000-03-07
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, 257401, 257510, 257639, H01L 2972
Patent
active
060344032
ABSTRACT:
A high-density flat cell mask ROM is disclosed. The mask ROM comprises: a semiconductor substrate having a plurality of trenches and each of the trenches is separated to keep a space with each other. A plurality of oxynitride layers is formed on all sidewall and bottom surfaces of those trenches. A plurality of n+-doped polysilicon layers is formed on the oxynitride layers. A n+ doped silicon layer serves as buried bit line formed in the semiconductor substrate and surrounding the trenches. Each of the doped silicon layers is spaced from the n+-doped polysilicon layers by the oxynitride layer. A plurality of thick oxide layers is formed on the n+ polysilicon layers. A plurality of thin oxide layers are formed on the semiconductor substrate and between those thick oxide layer, and each of thin oxide layers is contiguous with the thick oxide layers. A coding region is formed in the semiconductor substrate and abutting one of those thin oxide layers, and another n+-doped polysilicon layer formed on upper surfaces of those thick oxide layers, and those thin oxide layers.
REFERENCES:
patent: 5517047 (1996-05-01), Linn et al.
Acer Semiconductor Manufacturing Inc.
Wojciechowicz Edward
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