Semiconductor device having capacitor

Details Semiconductor device having capacitor Semiconductor device having capacitor

1998-09-11

2000-03-07

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257534, H01L 27108

Patent

active

060343923

ABSTRACT:
The present invention relates to a capacitor and a method of fabricating the same including a semiconductor substrate, an impurity region in the semiconductor substrate, a first insulating layer on the semiconductor substrate, the first insulating layer having a first contact hole to expose the impurity region, a first conductive layer in the contact hole, a second conductive layer on the first insulating layer, a second insulating layer on the first insulating layer including the second conductive layer, the second insulating layer contacting the first portion of the second conductive layer, a lower electrode on the second insulating layer, the lower electrode being not directly contacting the first conductive layer, a dielectric layer on the lower electrode including the second insulating layer, and an upper electrode on the dielectric layer.

REFERENCES:
patent: 4799093 (1989-01-01), Kohara et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5479317 (1995-12-01), Ramesh
patent: 5504041 (1996-04-01), Summerfelt
patent: 5729034 (1998-03-01), Park

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