Method for using asymmetric OPC structures on line ends of...

Details Method for using asymmetric OPC structures on line ends of... Method for using asymmetric OPC structures on line ends of...

2006-12-05

2006-12-05

Garbowski, Leigh M. (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

07146599

ABSTRACT:
A method is disclosed for conducting optical proximity correction (OPC) on at least two features in a circuit design. After detecting a first feature having at least one end thereof to be in the proximity of one end of a second feature, a first OPC pattern is incorporated to the end of the first feature toward a first direction; and a second OPC pattern is incorporated to the end of the second feature toward a second direction that is substantially opposite from the first direction.

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patent: 2004/0107410 (2004-06-01), Misaka et al.
patent: 2005/0022150 (2005-01-01), Liu et al.

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