Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-06-25
2000-03-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
251296, 251304, H01L 27108
Patent
active
060343907
ABSTRACT:
A multi-bit trench capacitor having first and second storage nodes provided in the lower region thereof is described. The storage nodes are separated by a dielectric layer that separates the sensing voltage into upper and lower ranges corresponding to data stored in the first and second storage nodes.
REFERENCES:
patent: 5909619 (1999-06-01), Chi
patent: 5920785 (1999-07-01), Chi et al.
Braden Stanton C.
Infineon Technologies North America Corp.
Thomas Tom
Tran Thien F
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