Nonvolatile integrated semiconductor memory

Details Nonvolatile integrated semiconductor memory Nonvolatile integrated semiconductor memory

2006-08-01

2006-08-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S182000, C438S954000, C257S411000

Reexamination Certificate

active

07084454

ABSTRACT:
A nonvolatile integrated semiconductor memory has an arrangement of layers with a tunnel barrier layer and a charge-storing level. The charge-storing level has a dielectric material which stores scattered in charge carriers in a spatially fixed position. The tunnel barrier layer has a material through which high-energy charge carriers can tunnel. At least one interface surface of the charge-storing level has a greater microscopic roughness than the interface surface of the tunnel barrier layer, which is remote from the charge-storing level. The charge-storing level has a greater layer thickness in first regions than in second regions. This produces a relatively identical distribution and localization of positive and negative charge carriers in the lateral direction. The charge carriers which are scattered into the charge-storing level, therefore, recombine completely, so that the risk of unforeseen data loss during long-term operation of nonvolatile memories is reduced.

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