Method for creating barrier layers for copper diffusion

Details Method for creating barrier layers for copper diffusion Method for creating barrier layers for copper diffusion

2006-02-14

2006-02-14

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000, C438S677000, C257S762000

Reexamination Certificate

active

06998343

ABSTRACT:
A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.

REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3710205 (1973-01-01), Swanson
patent: 4352716 (1982-10-01), Schaible et al.
patent: 6057223 (2000-05-01), Lanford et al.
patent: 6077775 (2000-06-01), Stumborg et al.
patent: 6083794 (2000-07-01), Hook et al.
patent: 6083818 (2000-07-01), Stumborg et al.
patent: 6117770 (2000-09-01), Pramanick et al.
patent: 6211066 (2001-04-01), Stumborg et al.
patent: 6226173 (2001-05-01), Welsch et al.
patent: 6261963 (2001-07-01), Zhao et al.
patent: 6355555 (2002-03-01), Park
patent: 6441492 (2002-08-01), Cunningham
patent: 6566247 (2003-05-01), Stumborg et al.
patent: 6633085 (2003-10-01), Besser et al.
patent: 6703307 (2004-03-01), Lopatin et al.
patent: 6703308 (2004-03-01), Besser et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 63290559 (1988-11-01), None

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