Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-28
2006-02-28
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S702000, C438S736000
Reexamination Certificate
active
07005374
ABSTRACT:
Disclosed is an improved method for forming contact holes. The method of the present invention includes the steps of providing a substrate; forming a plurality of operation layers on the substrate as necessary; forming a poly-silicon layer on the uppermost one of the operation layers; forming an anti-reflective layer on the poly-silicon layer; forming a photoresist layer on the anti-reflective layer to define the positions where the contact holes are to be formed; removing portions of the anti-reflective layer not covered with the photoresist layer; removing the photoresist layer; removing portions of the poly-silicon layer not covered with the anti-reflective layer; and using the residual poly-silicon layer as a mask to etch and form the contact holes. In the step of removing portions of the poly-silicon layer comprises partially removing portions of the poly-silicon not covered with the anti-reflective layer to form recesses, removing the anti-reflective layer, and opening the recesses of the poly-silicon to form openings.
REFERENCES:
patent: 6008123 (1999-12-01), Kook et al.
patent: 6027861 (2000-02-01), Yu et al.
patent: 6287951 (2001-09-01), Lucas et al.
patent: 2003/0129840 (2003-07-01), Kumar et al.
Chen Yi-Nan
Huang Tse-Yao
Bacon & Thomas PLLC
Everhart Caridad
Nanya Technology Corporation
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