Field emission phase change diode memory

Details Field emission phase change diode memory Field emission phase change diode memory

2006-06-06

2006-06-06

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Amorphous

C257S003000, C438S800000

Reexamination Certificate

active

07057923

ABSTRACT:
A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) or GST layer. The cell also includes a stylus with the apex of the stylus contacting the GST layer. The apex may penetrate the GST layer

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