Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-05-30
2006-05-30
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07054187
ABSTRACT:
A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
REFERENCES:
patent: 5659499 (1997-08-01), Chen et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6831855 (2004-12-01), Kishi et al.
Amano Minoru
Asao Yoshiaki
Iwata Yoshihisa
Kishi Tatsuya
Nishiyama Katsuya
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Michael
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