Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-05-09
2006-05-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S795000
Reexamination Certificate
active
07041584
ABSTRACT:
An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.
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Ito Takayuki
Nakajima Kazuaki
Suguro Kyoichi
Tanaka Masayuki
Tsunashima Yoshitaka
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Kabushiki Kaisha Toshiba
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