Semiconductor storage device having a function to convert...

Details Semiconductor storage device having a function to convert... Semiconductor storage device having a function to convert...

2006-11-28

2006-11-28

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000

Reexamination Certificate

active

07141849

ABSTRACT:
In a semiconductor storage device, a gate insulating film and a gate electrode are laid on a first conductivity type semiconductor substrate, and charge holding portions are formed on both sides of the gate electrode. Second conductivity type first and second diffusion layer regions are formed in regions of the semiconductor substrate corresponding to the charge holding portions. The charge holding portions are each structured so as to change, in accordance with an electric charge amount held in the charge holding portions, a current amount flowing from one of the second conductivity type diffusion layer regions to the other of the diffusion layer regions through a channel region when voltage is applied to the gate electrode. Part of each charge holding portion is present below an interface of the gate insulating film and the channel region.

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