Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Flynn, Nathan J. (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S300000, C257S302000, C257S303000
Reexamination Certificate
active
07042040
ABSTRACT:
A semiconductor memory device comprises select transistors formed on side surfaces of plural silicon columns defined by a grid-like trenches on a surface of a silicon substrate, each select transistor having a source and a drain on the top surface and the bottom of the silicon column. A capacitor is formed on the top surface of the silicon column to form a DRAM cell. The source/drain layers on the bottom of a greater number of memory cells are commonly connected, or the source/drain layers on the bottom of adjacent memory cells are commonly connected, to be brought out to the surface of the silicon substrate by a connection line to be connected to a constant voltage or a bit line.
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Flynn Nathan J.
Kabushiki Kaisha Toshiba
Mondt Johannes
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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