Method for forming resist pattern in reverse-tapered shape

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C430S270100

Reexamination Certificate

active

07045471

ABSTRACT:
A negative-working radiation sensitive resin composition with good heat resistance and low water absorption, which is useful for formation of a resist pattern in the lift-off method or as an insulating member in a organic EL panel and is able to form a reverse tapered resist pattern with a good shape. The negative-working radiation sensitive resin composition comprises (A) an alkali-soluble resin obtained by polycondensation of methylol bisphenol compounds represented by general formula (I) below, phenol compounds used as necessary and aldehydes, (B) a crosslinking agent and (C) a photo-acid generator. The negative-working radiation sensitive resin composition is applied onto a substrate, exposed to light and developed to form a reverse tapered pattern. A metal pattern is formed by vapor-depositing a metal film over the reverse tapered pattern and then removing the resist pattern by developer.Wherein R1to R4each represent a hydrogen atom, a C1to C3alkyl group or —CH2OH whereupon at least one of R1to R4represents —CH2OH, and R5and R6each represent a hydrogen atom or a C1to C3alkyl group.

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