Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S244000, C257S306000
Reexamination Certificate
active
07091538
ABSTRACT:
A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.
REFERENCES:
patent: 6762445 (2004-07-01), Ogawa et al.
patent: 08046155 (1996-02-01), None
patent: 2002-289810 (2002-10-01), None
Kanaya Hiroyuki
Natori Katsuaki
Yamakawa Koji
Andujar Leonardo
Kabushiki Kaisha Toshiba
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