Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2006-11-21
2006-11-21
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S185220, C365S185180, C257S314000
Reexamination Certificate
active
07139202
ABSTRACT:
A semiconductor storage device is provided, which comprises a memory array comprising memory elements, a write state machine for applying a first voltage for performing a write or erase operation, with respect to one of the memory elements, to the memory element via a bit line connected thereto, and thereafter, applying a second voltage for verifying whether or not the write or erase operation has been performed, to the memory element via the bit line, and a reset portion for grounding the bit line connected to the memory element after the write state machine has applied the first voltage and before the write state machine has applied the second voltage. Each memory element comprises a gate electrode, a channel region, diffusion regions, and memory function sections provided on opposite sides of the gate electrode and having a function of retaining charges.
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Iwata Hiroshi
Matsuoka Nobuaki
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Morrison & Foerster / LLP
Phung Anh
Sharp Kabushiki Kaisha
Wendler Eric J.
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